Document Type and Number:
Japanese Patent JPH02867
Kind Code:
B2
Abstract:
PURPOSE:To obtain the solar cell which has the beam receiving surfaces of both the surfaces front and the back and can convert beams effectively into electric energy even when beams are irradiated to either beam receiving surface while being able to easily form a beam receiving surface electrode without generating the short circuit of a p-n junction. CONSTITUTION:Boron is injected to an n type substrate 11 having 150-200mum thickness and approximately 10OMEGA.cm resistivity in 2X10<13>/cm<2> at 150keV. A p type diffusion layer 13 having 10-50mum thickness is shaped through heat treatment. An oxide film to which boron is doped is formed to the surface of the p type diffusion layer 13, an oxide film to which phosphorus is doped is shaped to the surface of the n type substrate 11, and n<+> type diffusion layers 14, 12 are each molded through heat treatment. Lasetly, the electrodes are formed to both surfaces. Accordingly, since the front and the back surfaces of the substrate can be used as luminous-electric energy converting surfaces, the expensive silicon single crystal substrate can be utilized effectively, and the cost of solar power generation system is reduced.
Inventors:
SUGANO MASAHIDE
Application Number:
JP11530781A
Publication Date:
January 09, 1990
Filing Date:
July 24, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L31/04; H01L31/06; H01L31/068