Title:
【発明の名称】pin型光起電力セルの製造方法
Document Type and Number:
Japanese Patent JPH07123113
Kind Code:
B2
Abstract:
Precursor gaseous mixtures from which wide and narrow band gap semiconductor alloy material may be deposited by a glow discharge process, said material characterized by improved photoconductivity and stability. There is also disclosed a method of fabricating a narrow band gap semiconductor that avoids differential depletion of the components of the precursor gaseous mixture.
Inventors:
Stanford Earl Ovshinsky
Sub Hendyu Guha
Plaem Nass
Qi Ji Yun Yang
Gieffli Founier
The Ames Kurman
Sub Hendyu Guha
Plaem Nass
Qi Ji Yun Yang
Gieffli Founier
The Ames Kurman
Application Number:
JP7411686A
Publication Date:
December 25, 1995
Filing Date:
March 31, 1986
Export Citation:
Assignee:
Energy Conversion Devices Incorporated
Canon Inc
Canon Inc
International Classes:
H01L31/04; H01L21/205; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JP5990923A | ||||
| JP59182521A |
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)