Title:
【発明の名称】Pチャネルトランジスタ
Document Type and Number:
Japanese Patent JPH07501180
Kind Code:
A
Abstract:
A P-channel transistor has a drain electrode (12), a source electrode (13), a gate electrode (16) and a bulk electrode (14). The drain and source electrodes (12, 13) form p-zones in an N-trough (10) and the trough (10) itself is embedded in a surrounding P-zone. The bulk electrode is at the same time the trough connection and is connected to the source electrode (13), whereas the drain electrode (12) is connected to the positive pole (U?+) of the operating voltage. This arrangement reliably ensures resistance to change of polarity, only negligible leakage currents flow even at higher temperatures, and only a trough (10), upon which further components may be housed, is required.
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Inventors:
Birney, Geralt
Application Number:
JP50733693A
Publication Date:
February 02, 1995
Filing Date:
September 17, 1992
Export Citation:
Assignee:
Robert Botschyu Gezershyaft Mitt Besilyen Ter Haftung
International Classes:
H01L29/78; H01L27/02; H01L29/08; (IPC1-7): H01L29/78
Domestic Patent References:
| JPS5731904A | 1982-02-20 |
Foreign References:
| SU1553140A1 | 1990-03-30 |
Attorney, Agent or Firm:
Toshio Yano (3 outside)
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