Title:
【発明の名称】ヒータの温度パターン作成方法及びこの温度パターンを用いたSi単結晶育成制御装置
Document Type and Number:
Japanese Patent JPH0774117
Kind Code:
B2
Abstract:
Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired squality, the diameter of the Si single crystal is4controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value TB(X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation DELTA D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern TB(X) on a screen of the display unit by using a mouse (78).
Inventors:
Kenji Araki
Maeda Akiho
Masahiko Baba
Maeda Akiho
Masahiko Baba
Application Number:
JP27351789A
Publication Date:
August 09, 1995
Filing Date:
October 20, 1989
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B15/00; C30B15/14; C30B15/26; C30B29/06; H01L21/208; (IPC1-7): C30B29/06; C30B15/26
Domestic Patent References:
| JPS55113696A |
Attorney, Agent or Firm:
Matsumoto Shinkichi
Next Patent: 磁気光学素子の製造方法