Title:
【発明の名称】核が形成されるシリコン表面の形成方法
Document Type and Number:
Japanese Patent JPH08509951
Kind Code:
A
Abstract:
PCT No. PCT/GB94/00964 Sec. 371 Date Mar. 26, 1996 Sec. 102(e) Date Mar. 26, 1996 PCT Filed May 4, 1994 PCT Pub. No. WO94/27323 PCT Pub. Date Nov. 24, 1994A structure is disclosed for growing semiconductor surfaces. A substrate such as a single crystal silicon substrate is treated by electrical biasing in the presence of a carbon-containing plasma to cause nucleation of the surface. By direct observation using atomic force microscopy (AFM), a nucleated surface consisting of a thin film of mutually parallel, quadrilateral carbon-containing platelets was seen to develop on the substrate. An optimum nucleated surface was determined to be substantially covered with such platelets whose slope relative to the substrate was less than 5 DEG . Such a surface can serve as a template for growing semiconductor films, particularly of diamond, of well defined structure.
Inventors:
Bujaenko, David Stefan
Ellis, Peter John
Southworth, Paul
Beer, Caroline Elizabeth
Ellis, Peter John
Southworth, Paul
Beer, Caroline Elizabeth
Application Number:
JP52511394A
Publication Date:
October 22, 1996
Filing Date:
May 05, 1994
Export Citation:
Assignee:
Kobe Steel Europe Limited
International Classes:
C23C8/36; C23C16/02; C23C16/26; C23C16/27; C30B25/18; C30B29/04; G01Q60/24; H01L21/203; H01L21/205; (IPC1-7): C30B29/04; C23C16/02; C23C16/26; C30B25/18; H01L21/205
Attorney, Agent or Firm:
Masanori Fujimaki