Title:
【発明の名称】銀・アルミニウム結合層を用いてスラグに連結された半導体本体を含んで構成されるガラス中に封止された型の半導体装置
Document Type and Number:
Japanese Patent JPH10501376
Kind Code:
A
Abstract:
The invention relates to a semiconductor device of the type sealed in glass, comprising a silicon semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal by means of a bonding layer, the bonding layer comprising a quantity of aluminum in the range between 7 and 15 wt. % and a quantity of silver in the range between 85 and 93 wt. %.
Inventors:
Juan Aken Timothes Johannes Maria
Application Number:
JP52822896A
Publication Date:
February 03, 1998
Filing Date:
March 11, 1996
Export Citation:
Assignee:
Philips Electronics Nemrose Fennaught Shap
International Classes:
H01L23/29; H01L21/60; H01L23/051; H01L23/08; H01L23/31; H01L23/48; H01L23/488; H01L23/492; H01L29/861; (IPC1-7): H01L23/48; H01L23/29; H01L23/31
Attorney, Agent or Firm:
Akihide Sugimura (6 others)