Document Type and Number:
Japanese Patent JPS5234352
Kind Code:
B2
Abstract:
A photon isolator device wherein the photon emitter and photodetector are matched such that the photodetector and transistor unit can be fabricated utilizing standard integrated circuit monolithic isolation techniques resulting in a high efficiency, high speed photon isolator; one preferred emitter utilizes GaAs(1-x)Px with x ranging from 0.20 to 0.48. A special technique is employed to provide a buried layer under the photodetector region that increases the collection layer depth. The elements in the integrated circuit transistor gain stage are formed so as to provide temperature compensation to balance the temperature dependence of the emitted light of the photon isolator. A novel plastic film insulation is utilized to mount and space the emitter and the photodetector elements of the photon isolator.
Application Number:
JP1752573A
Publication Date:
September 02, 1977
Filing Date:
February 14, 1973
Export Citation:
International Classes:
H03H11/02; H01L27/06; H01L27/144; H01L31/00; H01L31/10; H01L31/12; H03F3/08