Document Type and Number:
Japanese Patent JPS5242636
Kind Code:
B2
Abstract:
A high voltage transistor with high switching speed is provided by a semiconductor body having a thin internal portion and a thick integral peripheral portion. The thin internal portion has a substantially uniform width of greater than about 28 microns and oppositely facing surface areas each of greater than about 0.10 cm2. The thick peripheral portion has a width greater than about 150 microns and an annular dimension, i.e. radial width, greater than 10 microns but less than the corresponding radial dimension of the internal portion.
Application Number:
JP4919273A
Publication Date:
October 25, 1977
Filing Date:
May 04, 1973
Export Citation:
International Classes:
H01L29/73; H01L21/308; H01L21/331; H01L21/58; H01L23/31; H01L23/482; H01L29/00; (IPC1-7): H01L29/72; H01L29/08