PURPOSE: To provide a titled device which can control reactive gaseous pressure near the substrate in a wide range, by providing a partition wall having many small holes between a target and the substrate disposed to face the target and separately forming an electric discharge chamber on the target side and a thin film forming chamber on the substrate side.
CONSTITUTION: A target 2 supported with a support 3 and a substrate which is supported with a support 5 mounted with a rotating device 13 and is to be formed with thin films thereon are disposed in a vacuum vessel 1 of a titled reactive sputtering device. The vessel 1 is divided to two chambers; an electric discharge chamber on the target 2 side and a thin film forming chamber on the substrate 4 side by means of a partition wall 11 having length 1W2 times the hole diameter and many small holes. An introducing device 6 for an inert gas such as Ar is mounted in the discharge chamber and an introducing device 7 for a reactive gas such as O2N2 in the thin film forming chamber. Evacuating devices 8, 9 are mounted respectively to the above-mentioned chambers. With such constitution, a ≥10 times difference can be given in the concn. of the reactive gas between the discharge chamber and the thin film forming chamber, and since the plasma generated in the discharge chamber is shut off by the wall 11, there are virtually no increase in the substrate temp. and the damage of the formed films and the distributions of the film thickness are made uniform.
NAKAGAWA YOSHIO
ABE KATSUO
