Title:
【考案の名称】MOSFET寿命試験装置
Document Type and Number:
Japanese Patent JPS58165680
Kind Code:
U
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Inventors:
Oni Tetsuo
Application Number:
JP6310982U
Publication Date:
November 04, 1983
Filing Date:
April 28, 1982
Export Citation:
International Classes:
G01R31/26; H01L21/66; (IPC1-7): G01R31/26; H01L21/66
Domestic Patent References:
| JPS5414744A | 1979-02-03 | |||
| JPS54158251A | 1979-12-13 |