【考案の名称】メモリセル

Title:

【考案の名称】メモリセル

Document Type and Number:

Japanese Patent JPS5917099

Kind Code:

U

More Like This:

JPS5843568	COMPLEMENTARY TYPE INSULATING GATE FIELD EFFECT SEMICONDUCTOR MEMORY DEVICE
JPH07114799	SEMICONDUCTOR MEMORY
JPS63316399	READ-ONLY MEMORY HAVING COPY INHIBITING FUNCTION

Inventors:

Yutaka Harada
Toshikazu Nishino

Application Number:

JP11100382U

Publication Date:

February 01, 1984

Filing Date:

July 23, 1982

Export Citation:

International Classes:

G11C17/00; G11C11/44; H01L39/22; (IPC1-7): G11C17/00; G11C11/44; H01L39/22

Previous Patent: A manufacturing method of Lynn content phenol resin

Next Patent: JPS5917100