Document Type and Number:
Japanese Patent JPS6146076
Kind Code:
B2
Abstract:
PURPOSE:To obtain an APD having excellent characteristics, e.g., high magnification factor, low dark current, etc. with a sensitivity for the light of 1.2-1.65mum of wavelength by forming specific buffer layer, light absorption layer, two-layer InP layer, photoreceiving element, etc. on a substrate. CONSTITUTION:The same conductive type impurity-containing InP buffer layer 21, an InGaAs light absorption layer 31, and an InP first layer 41 are formed on an InP substrate 2 containing N type or P type impurity. An InP second layer 41 containing the same conductive type impurity as the first layer 41 higher in density than the first layer 41 is formed thereon, and different conductive impurity high density photodetector 61 are formed on a part of the region. Further, the same conductive type impurity high density containing guard ring 43 is formed on a part of the surface layer of the second layer 41 around the photoreceiving element 61.
Inventors:
AISAKA FUKUNOBU
Application Number:
JP9302580A
Publication Date:
October 11, 1986
Filing Date:
July 08, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/10; H01L31/107
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