Title:
【発明の名称】イオンビ-ムと電子ビ-ムリソグラフイのためのポリシロキサンレジスト
Document Type and Number:
Japanese Patent JPS62502071
Kind Code:
A
Abstract:
A method for providing a high temperature imaging resist layer for use in a multilayer resist system. A relatively thick planarizing resist layer is coated onto a suitable substrate to provide a planarizing resist layer having a planar surface. A relatively thin layer of a solvent soluble polysilsesquioxane polymer resist is applied to the planar surface to form an imaging resist which remains solvent soluble at temperatures up to 250 DEG C. The hydroxyl or alkoxy content of the polysilsesquioxane must be 0.05 weight percent or less in order to prevent cross linking of the polysilsesquioxane. The polysiloxane polymer resist is prepared by hydrolizing and polymerizing trichlorosilanes having the formula RSiCl3 where R is methyl, phenyl, vinyl, n-butyl, t-butyl, chlorophenyl, or chloromethyl-phenyl. The hydroxyl content of the polysilsesquioxane is reduced to 0.05 weight percent by capping the polymer with monoreactive silanes. The polysiloxane imaging resist is designed for use in high temperature electron beam and ion beam lithography.
Inventors:
Robert G. Blault
Application Number:
JP50148586A
Publication Date:
August 13, 1987
Filing Date:
February 28, 1986
Export Citation:
Assignee:
Hues Aircraft Company
International Classes:
G03F7/004; C08G77/06; G03F7/038; G03F7/075; G03F7/09; G03F7/11; H01L21/30; (IPC1-7): C08G77/06; G03C1/00; G03C1/71; G03F7/10; H01L21/30
Domestic Patent References:
| JPS57146141A | 1982-09-09 | |||
| JPS5760330A | 1982-04-12 | |||
| JPS57168247A | 1982-10-16 | |||
| JPS5649540A | 1981-05-06 | |||
| JPS60254132A | 1985-12-14 | |||
| JPS60262150A | 1985-12-25 |
Attorney, Agent or Firm:
Takehiko Suzue