Japanese Patent JPS6322070

B2

A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.

JPH0575036	MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
JP3169987	INDUSTRIAL APPLICABILITY: An integrated circuit including an input buffer circuit.
WO/2012/117675	BOOST PFC CONTROL DEVICE

ISHIBASHI SHUZO
OGURA SADAO
KITAMURA YUKINORI

JP15292579A

May 10, 1988

November 28, 1979

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HITACHI SEISAKUSHO KK
HITACHI TOKYO EREKUTORONIKUSU KK

H01L27/04; H01L21/22; H01L21/331; H01L21/74; H01L21/822; H01L21/8222; H01L27/02; H01L27/06; H01L27/08; H01L29/73; H01L29/93

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