Title:
【発明の名称】集積回路デバイス製作のためのパターン転写プロセス
Document Type and Number:
Japanese Patent JPS63502936
Kind Code:
A
Abstract:
Available high resolution electron-beam-sensitive resists such as PBS are characterized by poor resistance to dry etching. Such resists are therefore not suitable for use in standard trilevel-resist processes that are essential for submicron lithography. As disclosed herein, a very thin layer (24) of a wet-etchable metal is substituted for silicon dioxide in the conventional trilevel structure. Since PBS exhibits good robustness to wet etching, patterns in PBS can be transferred into the very thin metal layer without significantly degrading line-edge quality. The metal layer then serves as a robust mask to dry etch the pattern into the underlying planarizing layer (22).
Inventors:
Mansfield, william michael
Weidea, Sheila
Weidea, Sheila
Application Number:
JP50206887A
Publication Date:
October 27, 1988
Filing Date:
March 04, 1987
Export Citation:
Assignee:
American Telephone and Telegraph Campany
International Classes:
G03F7/26; G03F7/00; G03F7/09; G03F7/11; H01L21/027; H01L21/311; H01L21/312; (IPC1-7): G03C1/00; G03C5/00; G03F7/00
Domestic Patent References:
| JPS6011243A | 1985-01-21 | |||
| JPS5943029A | 1984-03-09 | |||
| JPS5811786A | 1983-01-22 | |||
| JPS4979525A | 1974-08-01 |
Foreign References:
| US0436259A | 1890-09-09 |
Attorney, Agent or Firm:
Masao Okabe (2 outside)