Document Type and Number:
Japanese Patent JPWO2021002134
Kind Code:
A1
Abstract:
Provided is a semiconductor film having exceptional drive durability, a photoelectric conversion element, an image sensor, and a method for manufacturing a semiconductor film. The semiconductor film includes: an aggregate of semiconductor quantum dots containing metal atoms; and ligands coordinated to the semiconductor quantum dots. The ligands include a first ligand that is an inorganic halide, and a second ligand represented by any of formulae (A) to (C). XA1 and XA2 are separated by LA1 by 3 to 10 atoms. XB1 and XB3 are separated by LB1 by 3 to 10 atoms, and XB2 and XB3 are separated by LB2 by 1 to 10 atoms. XC1 and XC4 are separated by LC4 by 3 to 10 atoms, XC2 and XC4 are separated by LC2 by 1 to 10 atoms, and XC3 and XC4 are separated by LC3 by 1 to 10 atoms.
Application Number:
JP2021529928A
Publication Date:
January 07, 2021
Filing Date:
June 02, 2020
Export Citation:
Domestic Patent References:
| JP2014093327A | 2014-05-19 | |||
| JP2014127563A | 2014-07-07 |
Foreign References:
| US20180145204A1 | 2018-05-24 | |||
| US20150183943A1 | 2015-07-02 |
Other References:
PRADHAN, SANTANU ET AL.: "Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic", SMALL, vol. 13, JPN6020025377, 2017, pages 1700598 - 1, ISSN: 0005029456