Document Type and Number:
Japanese Patent JPWO2021002327
Kind Code:
A1
Abstract:
The present invention provides: a light absorption layer for forming a photoelectric conversion element and an intermediate-band solar cell which have excellent two-step light absorption quantum yield; and a photoelectric conversion element and an intermediate-band solar cell having the light absorption layer. In addition, the present invention provides a method for manufacturing a light absorption layer that includes an intermediate-band and that has few voids. This light absorption layer: is configured so that quantum dots are scattered in the matrix of a bulk semiconductor having band gap energy of 2.0 to 3.0eV; includes an intermediate-band; and has a void rate of no more than 10%.
Application Number:
JP2021530017A
Publication Date:
January 07, 2021
Filing Date:
June 29, 2020
Export Citation:
