Document Type and Number:
Japanese Patent JPWO2022074835
Kind Code:
A1
Abstract:
One aspect provides a method for adjusting the polishing speed of a silicon substrate and the surface quality of the polished silicon substrate. In one aspect, this method is for adjusting the polishing speed of a silicon substrate and the surface quality of the polished substrate by: using a polishing liquid composition, which contains at least one component selected from the group consisting of an amino group-containing water‐soluble polymer compound (component A) having a pKa of 5-8.5 and a nonionic water‐soluble polymer compound (component B); and changing the content ratio of the component A and the component B.
Application Number:
JP2022555239A
Publication Date:
April 14, 2022
Filing Date:
October 09, 2020
Export Citation:
