Title:
AIRTIGHT SEALING OF SILICON WAFER
Document Type and Number:
Japanese Patent JPS63122130
Kind Code:
A
Abstract:
A method of forming a hermetic seal between two silicon wafers includes forming opposing troughs in each of the two wafers. In each trough are formed an isolation layer, a diffusion barrier and a tub of polysilicon. A gold strip is put on one polysilicon tub and the two silicon wafers are brought together and heated in a thermal gradient oven. A silicon gold eutectic is formed which migrates to the diffusion barrier of the silicon wafer.
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Inventors:
MATEI MITSUKOAA
Application Number:
JP27462487A
Publication Date:
May 26, 1988
Filing Date:
October 29, 1987
Export Citation:
Assignee:
FORD MOTOR CO
International Classes:
H01L21/56; H01L21/98; H01L25/065; (IPC1-7): H01L21/56
Attorney, Agent or Firm:
Akira Asamura (2 outside)