To provide a semiconductive alumina sintered body which has a static electricity removing action capable of releasing static electricity at a proper rate without greatly deteriorating mechanical characteristic of alumina.

A composition is prepared so as to contain 4-10 wt.% TiO2 as a conductivity-imparting agent to 90-96 wt.% Al2O3, and a formed body after forming is subjected to reduction sintering in a mixed gas atmosphere of hydrogen (H2) and nitrogen (N2) at the normal pressure and, thereby, the semiconductive alumina sintered body having volume resistivity of 105-1010 Ωcm is formed.