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Title:
ALUMINUM NITRIDE SINTERED COMPACT, AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
Japanese Patent JP2009249221
Kind Code:
A
Abstract:

To provide an aluminum nitride sintered compact having high thermal conductivity and further having satisfactory machinability.

Disclosed is an aluminum nitride sintered compact having aluminum nitride crystal grains having hardness of 21,000 Pa and the average grain size of 4 to 9 m. The sintered compact preferably comprises a sintering assistant-containing phase having the average grain size of 0.5 to 2 m and preferably containing Y2O3 as a single compound at the triple point of each aluminum nitride crystal grain at a ratio in which the ratio of Y in the sintered compact reaches 1.4 to 3.5 mass%.


Inventors:
KAKUNO AYAKO
KANECHIKA YUKIHIRO
AZUMA MASANOBU
Application Number:
JP2008098596A
Publication Date:
October 29, 2009
Filing Date:
April 04, 2008
Export Citation:
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Assignee:
TOKUYAMA CORP
International Classes:
C04B35/581; C04B35/64
Domestic Patent References:
JPH06219844A1994-08-09
JPH02204367A1990-08-14
JPH046161A1992-01-10
JP2005001975A2005-01-06
JP2002249379A2002-09-06
JP2003020282A2003-01-24
JP2004131375A2004-04-30
JP2001261444A2001-09-26
JPH06219844A1994-08-09
JPH02204367A1990-08-14
JPH046161A1992-01-10
JP2005001975A2005-01-06
JP2002249379A2002-09-06
JP2003020282A2003-01-24
JP2004131375A2004-04-30
JP2001261444A2001-09-26
Foreign References:
WO2005049525A12005-06-02
WO2005049525A12005-06-02



 
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