To remove a leak component without using the active filter of high performance and to eliminate frequency dependency from removal effect.

Four NMOS transistors M3 to M6 constituting a source follower circuit supply base band signals to the drains of the NMOS transistor M1 and the NMOS transistor M2, which constitute a transistor pair, supply signals obtained by inverting the base band signals to the source of the NMOS transistor M1 and the NMOS transistor M2, which form the transistor piar. A carrier signal is applied to the gate of one MOS transistor forming the transistor pair and a signal obtained by inverting the carrier signal is supplied to the gate of the other MOS transistor.