Title:
ANTI-STATIC COUNTERMEASURE DURING ION IMPLANTATION
Document Type and Number:
Japanese Patent JPH0758053
Kind Code:
A
Abstract:
PURPOSE: To prevent a board from being charged during ion implantation.
CONSTITUTION: When ions are implanted into a semiconductor area by way of an insulating layer 1, the insulating layer 1 is preliminarily coated with a conductive film 3 so as to prevent the area from being charged. This method is applicable to a thin film semiconductor area 2 in which the film is formed on an insulating board 4 and, what is more, which is covered with the insulating layer 1.
Inventors:
MATSUKUBO TAKASHI
Application Number:
JP22212793A
Publication Date:
March 03, 1995
Filing Date:
August 12, 1993
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/265; (IPC1-7): H01L21/265
Attorney, Agent or Firm:
Suzuki Harutoshi
Next Patent: ION IMPLANTATION