ANTIREFLECTION COMPOSITION AND RESIST PATTERN FORMING METHOD

Japanese Patent JP3827762

B2

PROBLEM TO BE SOLVED: To obtain a good antireflection film which has good step coverage in spite of a small film thickness and good dry etching resistance by incorporating plural kinds of compds. which are expanded in the difference in solubility into the solvent between the compds. in a coating film by heating and/or photoirradiation after application.
SOLUTION: Two or more kinds of the compds. contg. coating film forming materials are incorporated into this compsn. The compds. which are expanded in the difference in the solubility into the solvent between the compds. in the coating film by heating and/or photoirradiation after application are incorporating in ≥2 kinds into the compsn. This antireflection film compsn. is applied on the substrate and the salubility of the least one kind of the compd. in the coating film into the solvent is changed by heating and/or photoirradiation and only the components soluble into the solvent are extracted and removed to form the antireflection film. This film is subjected to resist pattern forming by the conventional method. Only the components soluble into the developer in the antireflection film are extracted and removed simultaneously with resist film development.

Mineo Nishi
Masashi Teramoto

JP7023696A

September 27, 2006

March 26, 1996

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Rohm and Haas Electronic Materials, L.L.C.

G03F7/004; G03F7/11; G03F7/30; G03F7/38; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): G03F7/11; G03F7/004; G03F7/30; H01L21/027; H01L21/3065

JP1204045A
JP60122933A

Minoru Senda
Hisashi Tsuji
Koji Hashimoto

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