Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3215729
Kind Code:
B2
Abstract:
PURPOSE: To attain gettering effect for metallic impurities causing deterioration of the characteristics of oxide by heat treating a silicon wafer having oxygen concentration of specified value or above at a specified temperature or above in hydrogen atmosphere thereby precipitating oxygen in the wafer.
CONSTITUTION: A silicon wafer having oxygen concentration of 1.3×1018atoms/ cm3 or above is sliced from a silicon single crystal pulled up by Czochralski method and heat treated at 1000°C or above in 100% hydrogen atmosphere. Consequently, oxygen concentration is lowered to 2×1017atoms/cm3 or below in the device active region of surface layer. The silicon wafer is then heat treated to form an oxide of 20nm thick on the surface and a polysilicon gate electrode is formed thereon thus obtaining a MOS structure. Consequently, the oxide withstands sufficiently against electric field of 10MV/cm3 or above and dielectric strength does not deteriorate even after repeated application of electric field stress.
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Inventors:
Ryuji Takeda
Hiroshi Shirai
Hojo
Hiroshi Shirai
Hojo
Application Number:
JP32337092A
Publication Date:
October 09, 2001
Filing Date:
December 02, 1992
Export Citation:
Assignee:
Toshiba Ceramics Co., Ltd.
International Classes:
H01L21/316; H01L21/8247; H01L29/788; H01L29/792; (IPC1-7): H01L21/316; H01L21/8247; H01L29/788; H01L29/792
Domestic Patent References:
| JP5102112A | ||||
| JP382125A | ||||
| JP2177542A | ||||
| JP4245631A | ||||
| JP5335301A |
Attorney, Agent or Firm:
Takehiko Suzue