ASHING APPARATUS FOR RESIST FILM

Japanese Patent JPH0629260

A

PURPOSE: To provide an ashing apparatus for resist films, which can remove the whole resit film on the wafer uniformly at a high speed.

CONSTITUTION: A nozzle member 21 for introducing ozon is provided between an ultravioret beam irradiation window 7 and a wafer W within a processing chamber provided with the ultravioret beam irradiation window 7 for chemically processing the wafer W. The ashing is carried out by radiating the ultravioret beam to the wafer W from an ultravioret beam lamp 5. In this case, the nozzle member 21 formed like a pipe with a material which does not allow transmission of light of the wavelength of 200nm to 300nm and it is extended along the proximity of the surface of wafer W and is provided with a plurality of ozon injection ports 2B to equally supply the ozon to the entire surface of the wafer W. Moreover, it is preferable that the nozzle member 21 is formed by a glass member which does not allow transmission of ultravioret beam having the wavelength of 200nm to 300nm.

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SEKI TADAHIRA
ARAI TETSUHARU
SUZUKI SHINJI

JP20623792A

February 04, 1994

July 10, 1992

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USHIO ELECTRIC INC

G03F7/42; H01L21/027; H01L21/30; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302; G03F7/42; H01L21/027

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