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Title:
AVALANCHE PHOTODIODE
Document Type and Number:
Japanese Patent JP2015170686
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To obtain linearity of a response to optical input intensity of an avalanche photodiode without thinning a light absorption layer.SOLUTION: A p-type second light absorption layer 104 is formed on an undoped first light absorption layer 103 in contact, a p-type field control layer 105 is formed on the second light absorption layer 104, and an avalanche layer 106 is formed on the p-type field control layer 105. The first light absorption layer 103 is composed of a first material comprising a III-V compound semiconductor, the second light absorption layer 104 is composed of a p-type first material, the p-type field control layer 105 is composed of a second material comprising a p-type III-V compound semiconductor, and the avalanche layer 106 is composed of the III-V compound semiconductor.

Inventors:
NADA MASAHIRO
MATSUZAKI HIDEAKI
Application Number:
JP2014043687A
Publication Date:
September 28, 2015
Filing Date:
March 06, 2014
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L31/107
Domestic Patent References:
JPH0637350A1994-02-10
JPH0338887A1991-02-19
JPH05160426A1993-06-25
JP2010135360A2010-06-17
JP2014032994A2014-02-20
JP2012243907A2012-12-10
JP2012054478A2012-03-15
JP2000082837A2000-03-21
JP2005510883A2005-04-21
JP2009164456A2009-07-23
JP2010278406A2010-12-09
JP2011124388A2011-06-23
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike



 
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