Title:
Back incidence type energy-rays detection element
Document Type and Number:
Japanese Patent JP6169856
Kind Code:
B2
Abstract:
A back-illuminated energy ray detecting element 1 includes a semiconductor substrate 11 and a protective film 21. The semiconductor substrate 11 has a first principal surface 11a as an energy ray incident surface and a second principal surface 11b opposite to the first principal surface 11a, and a charge generating region 13 configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface 11b side. The protective film 21 is disposed on the second principal surface 11b side of the semiconductor substrate 11 to cover at least the charge generating region 13, and includes silicon nitride or silicon nitride oxide. The protective film 21 has a stress alleviating section configured to alleviate stress generated in the protective film 21.
Inventors:
Miya Saki Yasuto
Kentaro Maeda
Masaharu Muramatsu
Kentaro Maeda
Masaharu Muramatsu
Application Number:
JP2013025798A
Publication Date:
July 26, 2017
Filing Date:
February 13, 2013
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L27/146; H01L27/148; H04N5/367; H04N5/369
Domestic Patent References:
| JP2004296827A | ||||
| JP2011249461A | ||||
| JP200673885A |
Foreign References:
| US4894703 | ||||
| US20060061674 | ||||
| US20100214457 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Satoru Ishida
Yoshiki Kuroki
Satoru Ishida
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