BONDING BASE MATERIAL AND MANUFACTURE THEREOF

Title:

BONDING BASE MATERIAL AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH11329997

Kind Code:

A

Abstract:

To prevent an Si wafer from causing typical defects such as FPD, COP, and OSF.

For a bonding base material formed by relocating a surface layer 12 of a first substrate 11 to a surface of a second substrate, a substrate, which includes at least an Si substrate manufactured by floating zone method, is prepared as the first substrate 11. The bonding base material is formed by a manufacturing process including the steps of bonding the first substrate 11 and the second substrate 15, dividing the bonded substrates at an ion implantation layer 14 which is previously formed on the Si substrate of the first substrate, and removing the ion implantation layer 14 which is exposed to the surface of the second substrate.

Inventors:

SAKAGUCHI KIYOBUMI
SATO NOBUHIKO
YONEHARA TAKAO

Application Number:

JP13391198A

Publication Date:

November 30, 1999

Filing Date:

May 15, 1998

Export Citation:

Click for automatic bibliography generation Help

Assignee:

CANON KK

International Classes:

H01L21/265; H01L21/02; H01L27/12; (IPC1-7): H01L21/265; H01L27/12

Attorney, Agent or Firm:

Yamashita

Previous Patent: SIMULATION METHOD FOR DENSITY DISTRIBUTION OF IMPURITY IN SEMICONDUCTOR

Next Patent: METHOD FOR IMPLANTING ION