Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3210464
Kind Code:
B2
Abstract:
PURPOSE: To provide a sufficiently flat shape, by carrying out rapid heating, rapid cooling and flattening in first, second, and third thermal treatment steps, and preventing the extension of an impurity diffusion layer using an insulating film fluidized in these steps.
CONSTITUTION: In a first thermal treatment step (TP1), an insulating film (BPSG film) 28 is formed on the main face of a semiconductor substrate 21, and a flattening step, in which the semiconductor substrate 21 is heated rapidly up to a temperature enough to make the BPSG film 28 fluidized, is carried out. In a second thermal treatment step (TP2), the semiconductor substrate 21 is rapidly cooled from the temperature at the first treatment step to a lower temperature, at which the BPSG film 28 is not fluidized in a steady state. In a third thermal treatment step (TP3), the semiconductor substrate 21 is held for a given time at this lowered temperature as in the second thermal treatment step so as to flatten the BPSG film 28. Then, the BPSG film can be sufficiently flattened.
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Inventors:
Akimichi Yonekura
Application Number:
JP1858993A
Publication Date:
September 17, 2001
Filing Date:
February 05, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/3205; H01L21/768; (IPC1-7): H01L21/768; H01L21/3205
Domestic Patent References:
| JP2109349A |
Attorney, Agent or Firm:
Takehiko Suzue