Title:
BULK MICROMACHINING METHOD
Document Type and Number:
Japanese Patent JPH07297172
Kind Code:
A
Abstract:
PURPOSE: To obtain a microstructure having high aspect ratio defined by a plane intersecting only at a rectangular corner by providing a thin region through etching on the opposite side of a wafer and making a recess structure having a vertical side wall integral with the thin region in the upper surface of the substrate by anisotropic etching. CONSTITUTION: A silicon nitride mask layer 4 is deposited on the upper surface of a substrate and another silicon nitride mask layer is deposited on the opposite surface of the substrate. A pattern part extending to the silicon nitride layer on the upper surface of the substrate is aligned with a pattern part extending through the silicon nitride layer on the opposite surface of the substrate. In order to form a thin region 20 using an anisotropic etchant, exposed part on the opposite surface of the substrate is etched vertically. Furthermore, a recess 24 extending vertically to the upper surface of the substrate is etched using that anisotropic etchant. The recess 24 has a side wall 25 intersecting the upper surface of the substrate perpendicularly. A mask edge 30 is undercut by the recess 24 which thereby abuts on the mask edge 30.
Inventors:
RESURII EE FUIIRUDO
FUIRITSUPU DABURIYUU BAASU
FUIRITSUPU DABURIYUU BAASU
Application Number:
JP8733595A
Publication Date:
November 10, 1995
Filing Date:
March 20, 1995
Export Citation:
Assignee:
HEWLETT PACKARD CO
International Classes:
G02B6/36; G02B6/24; H01L21/306; G02B6/38; G02B6/42; (IPC1-7): H01L21/306; G02B6/24
Attorney, Agent or Firm:
Hideo Ueno