Title:
SPUTTERING DEVICE AND FORMATION OF FILM
Document Type and Number:
Japanese Patent JP3242372
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a means of evading the problems of charge-up and abnormal discharge in a self-sputtering process.
SOLUTION: This sputtering device is provided with a vacuum chamber 12, a supporting means 18 supporting a substrate W, a target 16, a gas feeding means 25 for feeding process gas into the vacuum chamber, a plasmatizing means 24 for plasmatizing process gas and a pressure reducing means for reducing the pressure in the vacuum chamber, and, by returning a part of the particles sputtered from the target and also ionized and bombarding it thereon, sputtering is continued to form a film. In this case, an electron irradiating means 50 applying electrons on the vicinity of the surface of the substrate and/or on the surface of the substrate is provided, and the ionized particles reaching the surface of the substrate are neutralized by the electrons.
Inventors:
Yuuichi Wada
Application Number:
JP31064698A
Publication Date:
December 25, 2001
Filing Date:
October 30, 1998
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C14/34; C23C14/54; C23C14/56; H01L21/285; (IPC1-7): C23C14/34; H01L21/285
Domestic Patent References:
| JP5028485A | ||||
| JP6325724A | ||||
| JP5109642A |
Attorney, Agent or Firm:
Yoshiki Hasegawa (2 outside)
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