To provide a CCD image sensor capable of improving efficiency of transfer of charges by reducing generation of crystal defect.
In the CCD image sensor in which a large number of electrodes 30, 40 for charge transfer are disposed in an n well via an insulating film 20, the electrode 30 has a structure in which a p-type polysilicon 31 and an n-type polysilicon 32 are sequentially disposed toward a charge transfer direction, and the electrode 40 has a structure in which a p-type polysilicon 41 and an n-type polysilicon 42 are sequentially disposed toward a charge transfer direction. In such a configuration, a potential gradient due to a difference in work function between the p- and n-type polysilicons can be generated on an n-well 12 immediately below the electrodes 30, 40 without implanting ions onto the surface of a semiconductor substrate and the potential gradient matches the charge transfer direction, the charge transfer efficiency can be improved.
| JP2007067319 | METHOD FOR MANUFACTURING ELECTRIC CHARGE DETECTOR |
| JPS63255962 | MANUFACTURE OF SOLID-STATE IMAGE SENSING ELEMENT |
| JP4534412 | Solid-state image sensor |
PAIN BEDABRATA
| JPH09266302A | 1997-10-07 | |||
| JPH0529358A | 1993-02-05 | |||
| JPH06140442A | 1994-05-20 | |||
| JPH07176724A | 1995-07-14 | |||
| JPH03283629A | 1991-12-13 | |||
| JPH03246952A | 1991-11-05 | |||
| JP2005209879A | 2005-08-04 | |||
| JPS62126671A | 1987-06-08 |
Yoshiaki Naito
Cui Shu Tetsu