Title:
電荷キャリア取出インバースダイオード
Document Type and Number:
Japanese Patent JP7241053
Kind Code:
B2
Abstract:
An inverse diode die is "fast" (i.e., has a small peak reverse recovery current) due to the presence of a novel topside P+ type charge carrier extraction region and a lightly-doped bottomside transparent anode. During forward conduction, the number of charge carriers in the N- type drift region is reduced due to holes being continuously extracted by an electric field set up by the P+ type charge carrier extraction region. Electrons are extracted by the transparent anode. When the voltage across the device is then reversed, the magnitude of the peak reverse recovery current is reduced due to there being a smaller number of charge carriers that need to be removed before the diode can begin reverse blocking mode operation. Advantageously, the diode is fast without having to include lifetime killers or otherwise introduce recombination centers. The inverse diode therefore has a desirably small reverse leakage current.
Inventors:
Kyung Wook Suk
Application Number:
JP2020184607A
Publication Date:
March 16, 2023
Filing Date:
November 04, 2020
Export Citation:
Assignee:
IXYS, LLC
International Classes:
H01L29/861; H01L29/06; H01L29/868
Domestic Patent References:
| JP2066977A | ||||
| JP2014011213A | ||||
| JP10093113A | ||||
| JP2016025236A | ||||
| JP2013545295A |
Foreign References:
| US8716745 | ||||
| US20170178947 |
Attorney, Agent or Firm:
Yamato Kento
Noriko Cauldron
Toshihiro Nakatani
Noriko Cauldron
Toshihiro Nakatani
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