To provide a charged beam device, a method for measuring a pattern, and a method for manufacturing a semiconductor device provided with the same, capable of securely measuring a desired pattern at high speed without deterioration of images.

A wafer W is moved in such a way that a measurement pattern Pm or a close range to it crosses a center axis of an objective lens 22. An optical axis of an electron beam EB is shifted in a first direction from the position of the center axis of the objective lens 22 to the position of a matching pattern Pr by distance from the position of the center axis to the position of the matching pattern Pr to obtain an SEM image of the matching pattern Pr. Image matching is conducted between a reference image of the matching pattern Pr and the SEM image of the matching pattern Pr as the optical axis of the electron beam EB is deflected. The optical axis of the electron beam EB is shifted from the position of the matching pattern Pr in the opposite direction to the first direction by the same distance, and an SEM image of the measurement pattern Pm is obtained in this state.