Title:
コバルト用ケミカルメカニカルポリッシング方法
Document Type and Number:
Japanese Patent JP7231362
Kind Code:
B2
Abstract:
A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ≤25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.
Inventors:
Murari Gee Tivanaya Gum
Hong Yu Wan
Matthew Van Hanehem
Hong Yu Wan
Matthew Van Hanehem
Application Number:
JP2018175754A
Publication Date:
March 01, 2023
Filing Date:
September 20, 2018
Export Citation:
Assignee:
Roam and Haas Electronic Materials CMP Holdings Incorporated
International Classes:
H01L21/304; B24B37/00; B24B37/24; C09K3/14
Domestic Patent References:
| JP2016030831A | ||||
| JP2015201644A |
Foreign References:
| WO2016102279A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Tsukuni