Title:
CHEMICAL MECHANICAL POLISHING PAD AND ITS MANUFACTURING METHOD, AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
Japanese Patent JP2005333121
Kind Code:
A
Abstract:
To provide a chemical mechanical polishing pad capable of providing a surface to be polished excellent in uniformity in a surface and planarity, even when chemical mechanical polishing is performed, with large diameter wafer as a body to be polished, and its manufacturing method and a chemical mechanical polishing method.
A surface to be polished is composed of a surface, wherein arithmetic surface roughness (Ra) is in a range from 0.1 to 15 μm, 10 points average height (Rz) is in the range from 40 to 150 μm, nuclear depth roughness (Rk) is in the range from 12 to 50 μm, and damping height (Rpk) is in the range from 7 to 40 μm.
Inventors:
HOSAKA YUKIO
SHIMOYAMA YUJI
SHIHO KOUJI
KAWAHASHI NOBUO
SHIMOYAMA YUJI
SHIHO KOUJI
KAWAHASHI NOBUO
Application Number:
JP2005120561A
Publication Date:
December 02, 2005
Filing Date:
April 19, 2005
Export Citation:
Assignee:
JSR CORP
International Classes:
B24B37/20; B24B37/24; H01L21/304; (IPC1-7): H01L21/304; B24B37/00
Domestic Patent References:
| JP2002144220A | 2002-05-21 | |||
| JP2004001169A | 2004-01-08 | |||
| JP2002520173A | 2002-07-09 | |||
| JP2004098239A | 2004-04-02 |
Attorney, Agent or Firm:
Masataka Oshima
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