Title:
腐食を低減するための化学機械研磨スラリー及びその使用方法
Document Type and Number:
Japanese Patent JP6530303
Kind Code:
B2
Abstract:
Slurries and associated methods and systems for the chemical mechanical planarization (CMP) of tungsten-containing films on semiconductor wafers are described. The slurries comprise abrasive particles, activator-containing particles, peroxygen oxidizer, pH adjustor, and the remaining being water. The slurries have a pH in the range of 4 to 10; preferably 5 to 9; more preferably 6 to 8.
Inventors:
Break Jay Liu
Krishna P. Murella
Malcolm Grief
Xiaobosi
Don Yanesh Chandrakant Tamboli
Mark Leonard O'Neal
Krishna P. Murella
Malcolm Grief
Xiaobosi
Don Yanesh Chandrakant Tamboli
Mark Leonard O'Neal
Application Number:
JP2015212522A
Publication Date:
June 12, 2019
Filing Date:
October 29, 2015
Export Citation:
Assignee:
Vertham Materials US, Limited Liability Company
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
| JP2006019358A | ||||
| JP2009539253A | ||||
| JP2014194016A |
Foreign References:
| US20080149591 | ||||
| US20140315386 |
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mitsuhashi
Kenji Kimura
Naori Kota
Shinji Mitsuhashi
Kenji Kimura
Naori Kota