Title:
CHEMICAL VAPOR PHASE GROWTH DEVICE
Document Type and Number:
Japanese Patent JPS61198717
Kind Code:
A
Abstract:
PURPOSE:To relax the sudden drop of a temperature in a reaction pipe by mounting an annular gas introducing pipe to a substrate inserting port for the reaction pipe, blowing off an inert gas on the insertion of a wafer, obstructing the mixing of air into the pipe and preventing the oxidation of a substrate. CONSTITUTION:An annular section 6a in a reaction-gas injection pipe 6 is fitted while surrounding an inlet for a reaction pipe 3, and a plurality of holes 6b ejecting a gas into a ring are formed to the section 6a. An inert-gas introducing pipe 19 with an annular section 19a having the same structure as the pipe 6 and holes 19b is mounted in parallel with the pipe 6. A CVD film is grown, a reaction gas valve 7 is closed by a control section 8, the inside of the pipe 3 is evacuated, and a valve 9 is closed. The valve 7 is opened to introduce N2, the reaction pipe 3 is brought to atmospheric pressure, and an inlet cover 5 is opened and Si wafers on a boat 2 are carried out and inserted. N2 ejected from the pipe 19 is discharged approximately to the outside of the inlet during that time, only N2 is circulated in the reaction pipe 3, and air does not mix from the outside. Accordingly, the surfaces of the wafers are not oxidized, and a temperature drop due to the intrusion of the outside air can be prevented even when the opening of the inlet takes large size.
Inventors:
KONO YOSHIO
Application Number:
JP3965685A
Publication Date:
September 03, 1986
Filing Date:
February 28, 1985
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/205; H01L21/285; H01L21/31; (IPC1-7): H01L21/285; H01L21/31
Domestic Patent References:
| JP58072837B | ||||
| JPS58161317A | 1983-09-24 |
Attorney, Agent or Firm:
Kenichi Hayase