Title:
ECR PLASMA TREATING METHOD
Document Type and Number:
Japanese Patent JP3127557
Kind Code:
B2
Abstract:
PURPOSE: To provide an ECR plasma treatment technique in which yield of a device is improved by suppressing generation of particles even if the number of treatments is increased.
CONSTITUTION: An ECR plasma CVD forms a Ti film 1a and then forms a TiN film 1b. The CVD further dummy deposits the Ti film for preventing peeling of the film after the films 1b are formed for a number of predetermined times, thereby suppressing generation of particles due to the films 1b.
Inventors:
Junichi Sato
Application Number:
JP8739492A
Publication Date:
January 29, 2001
Filing Date:
April 09, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/285; H01L21/28; H01L21/768; H01L23/522; (IPC1-7): H01L21/285; H01L21/285; H01L21/768
Domestic Patent References:
| JP3286527A | ||||
| JP293072A | ||||
| JP3255624A |
Attorney, Agent or Firm:
Fujiya Shiga (1 person outside)