Title:
半導体基板を洗浄するための洗浄液
Document Type and Number:
Japanese Patent JP4270750
Kind Code:
B2
Abstract:
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
More Like This:
Inventors:
Li Shu
Zao Yuexing
Heims Diane Jay.
Delarios John M.
Zao Yuexing
Heims Diane Jay.
Delarios John M.
Application Number:
JP2000535721A
Publication Date:
June 03, 2009
Filing Date:
February 18, 1999
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
C11D1/00; H01L21/304; C09K13/00; C09K13/06; C09K13/08; C11D3/02; C11D7/02; C11D7/04; C11D7/08; C11D7/26; C11D11/00; C23G1/10; H01L21/02; H01L21/306; H01L21/308; H01L21/3205; H01L21/321
Domestic Patent References:
| JP7271056A |
Foreign References:
| US5662769 | ||||
| US5714203 |
Attorney, Agent or Firm:
Takao Igarashi
Takashi Shimoide
Hiroshi Ichikawa
Mitsuhiro Kato
Takashi Shimoide
Hiroshi Ichikawa
Mitsuhiro Kato