Title:
CLEANING METHOD FOR THIN FILM DEPOSITION SYSTEM
Document Type and Number:
Japanese Patent JP2008280591
Kind Code:
A
Abstract:
To provide a cleaning method for a thin film deposition system where, in cleaning with NF3 plasma, without subjecting a component made of Al or an Al alloy in a film deposition system directly exposed to the plasma to surface treatment, the generation of black powder (AlF) on the surface of the component is suppressed.
After the deposition of an a-Si:H film, for removing (cleaning) the a-Si:H film or a stacked film including the a-Si:H film, a gas of NF3 is introduced into a chamber 1, NF3 plasma is excited in a discharge space, and plasma cleaning is performed. In this cleaning, the pressure of the discharge space is controlled by a valve 5 or the like, so as to be 55 to 90 [Pa] with a Baratron vacuum gage 4.
Inventors:
ICHIKAWA KAZUO
IKEMOTO MANABU
IKEMOTO MANABU
Application Number:
JP2007126777A
Publication Date:
November 20, 2008
Filing Date:
May 11, 2007
Export Citation:
Assignee:
CANON ANELVA CORP
International Classes:
C23C16/44; C23C16/24; H01L21/205
Attorney, Agent or Firm:
Akio Miyazaki
Ishibashi Masayuki
Masaaki Ogata
Ishibashi Masayuki
Masaaki Ogata