PURPOSE: To provide the cleaning method for a semiconductor wafer which is intended to obtain the semiconductor wafer of high quality by improving a method for removing a foreign body adhering to the surface of the semiconductor wafer.

CONSTITUTION: When a semiconductor wafer is cleaned by using an etching solution, the mixture ratio of the etching solution is set to a composition ratio of H2SO4:H2O2:H2O=30 to 200:1:1, the wafer is immersed in the solution at room temperature for 30 to 60 seconds and a purpose is achieved. By this invention, an object which has adhered to the surface of the wafer can be removed in an atmosphere at room temperature and at normal pressure without worsening the surface state of the wafer, and the wafer of high quality can be obtained with good yield.