Title:
CMP METHOD
Document Type and Number:
Japanese Patent JP2008244337
Kind Code:
A
Abstract:
To provide a CMP technology, wherein a conventional abrasive material is used, and a polishing pressure is made low, namely even if CMP is given to a substrate with a Low-k film which is brittle in resistance to the pressure, such a brittle film is not damaged, and rubbing speed is high.
In a CMP method in which the CMP is given by a polishing pad to a surface of the film provided on the substrate, the method includes a step in which the polishing pad whose centerline average roughness Ra of a surface is 7 to 11 m is put into contact with the surface of the film, and a step in which the polishing pressure to the film exerted by the polishing pad is controlled to be 3 to 7 kPa.
Inventors:
ANZAI SO
YOKOI KATSUTAKA
MATSUMOTO TAKASHI
YOKOI KATSUTAKA
MATSUMOTO TAKASHI
Application Number:
JP2007085794A
Publication Date:
October 09, 2008
Filing Date:
March 28, 2007
Export Citation:
Assignee:
CONSORTIUM ADVANCED SEMICONDUCTOR MATERIALS & RELATED TECHNOLOGIES
International Classes:
H01L21/304; B24B37/005; B24B53/017; B24B53/02
Attorney, Agent or Firm:
Katsumi Utaka