To provide a CMP pad for a cerium oxide polishing agent with which a substrate such as a silicon oxide film or the like can be polished efficiently at a high speed and can readily control its process in a CMP technique for planarizing an interlayer dielectric, and a BPSG film and a shallow trench isolation insulating film, and to provide a method of polishing a wafer by using the same.
This CMP pad for a cerium oxide polishing agent is used to polish a thin film formed on a substrate chemically and mechanically by using a cerium oxide polishing agent and has fine projections and depressions on the surface. The mean surface roughness Ra along the center line of the pad surface is defined by the ratio to the D99% grain size of polishing agent particles measured by a laser scattering grain size distribution measuring instrument.
HANEHIRO MASANOBU
NAKAGAWA HIROSHI
| JP2000232082A | 2000-08-22 | |||
| JPH09286975A | 1997-11-04 | |||
| JPH1149599A | 1999-02-23 | |||
| JPH1148130A | 1999-02-23 |
| WO1999031195A1 | 1999-06-24 |