To further enhance the resolving power of a resist and to improve the profile of a pattern and the shape of the boundary face between a substrate and the resist by using a photosensitive compsn. contg. a specified compd. gener ating sulfonic acid as the resist.
An antireflection layer is formed on a substrate and a layer of a positive type resist compsn. contg. a compd. represented by formula I or II and generating sulfonic acid when the compd. is irradiated with active light or radiation, and a resin having groups which are decomposed by the action of the acid and increase solubility in an alkali developer is formed on the antireflection layer. In the formulae I and II, each of R1-R5 is H, alkyl, cycloalkyl, etc., R6 is alkyl or aryl and X- is an anion of benzene-, naphthalene- or anthracene-sulfonic acid having ≥31C substituents or substituents having ≥4 carbon atoms in total.
AOSO TOSHIAKI
MIZUTANI KAZUYOSHI
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