Title:
COLD-CATHODE ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3127242
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a good p-n junction by heating the I-VI group compound, which is heaped on a II-VI group compound semiconductor substrate, so as to thermally diffuse the I-type element in the substrate, and irradiating the substrate with the high-energy electromagnetic wave pulses in the ultra-high vacuum condition.
SOLUTION: I-VI group compound is heaped at 500-1000&angst thickness on the surface of a II-VI group compound semiconductor substrate, and thereafter, at least the surface of the substrate is heated so as to thermally diffuse the I-type element in the II-VI group semiconductor. Annealing is performed to the surface of this substrate in the inert gas atmosphere at 550-600°C, so as to form a p-type semiconductor region in the surface of the substrate. The surface of this p-type semiconductor is irradiated with the high-energy electromagnetic pulses so as to form the surface which can emit cold electrons at 100μA/cm2 or more.
Inventors:
Yoshiki Hatanaka
Application Number:
JP22245696A
Publication Date:
January 22, 2001
Filing Date:
August 23, 1996
Export Citation:
Assignee:
Shizuoka University
International Classes:
H01J9/02; H01J1/30; H01J1/308; (IPC1-7): H01J9/02; H01J1/30
Domestic Patent References:
| JP8180824A | ||||
| JP7141984A |
Attorney, Agent or Firm:
Takehiko Suzue (5 outside)