Title:
COMPD. SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JP3300657
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a short-wavelength band compd. semiconductor laser device capable of a low-threshold operation.
SOLUTION: On a substrate of a laser, an n-AlGaN clad layer 11, active layer 112, p-AlGaN clad layer 13, p-GaN contact layers 14, 15, and p-side electrode 16 are disposed. The p-side electrode 16, contact layers 14, 15 and p-clad layer 13 form a ridge structure 10 extending in the oscillating direction of a laser beam. The p-clad layer 13 has a ridge part 13a of the ridge structure 10 and extensions 13b at both sides of the ridge part 13a. An SiO2 dielectric coating layer 19 coats each side face of the ridge structure 10. A Cr/Au electrode layer 18 is disposed to cover the total length of the ridge structure 10, connected to the p-side electrode 16 and forms a non-Ohmic contact to the exposed surface of the extensions 13b.
Inventors:
Kazuhiko Itaya
Shinya Nunoue
Masayuki Ishikawa
Shinya Nunoue
Masayuki Ishikawa
Application Number:
JP35116697A
Publication Date:
July 08, 2002
Filing Date:
December 19, 1997
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01S5/00; H01S5/042; H01S5/227; H01S5/323; H01S5/343; (IPC1-7): H01S5/227
Domestic Patent References:
| JP9260772A | ||||
| JP3101286A | ||||
| JP10223970A | ||||
| JP10303502A | ||||
| JP4111375A | ||||
| JP62281384A | ||||
| JP5753990A | ||||
| JP7202344A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)