To provide a composition for polishing metal which is used for chemical and mechanical polishing for the manufacture of a semiconductor device and makes both high-speed polishing and low dishing of a matter to be polished compatible.
The composition for polishing metal contains at least one kind of compounds, expressed by general Formula (A) and at least one kind of compounds expressed by general Formula (B). In the general Formulas (A) and (B), R1 to R4, respectively independently express a hydrogen atom, an alkyl group, phenyl group, amino group, sulfo group, carboxy group, amino methyl group, carboxy methyl group, carboxy ethyl group, carboxy propyl group, sulfo methyl group, o-amino phenyl group, m-amino phenyl group, p-amino phenyl group, o-carboxy phenyl group, m-carboxy phenyl group, p-calboxy phenyl group, o-sulfo phenyl group, m-sulfo phenyl group and p-sulfo phenyl, and R2 and R3 may be fused.
KIKUCHI MAKOTO
TAKAHASHI KAZUYOSHI
INABA TADASHI
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda