銅、タンタルおよび窒化タンタルの化学的機械的平坦化用組成物

Title:

銅、タンタルおよび窒化タンタルの化学的機械的平坦化用組成物

Document Type and Number:

Japanese Patent JP2004524440

Kind Code:

A

Abstract:

Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

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Inventors:

Juan, Juan
Daniel, Tawaree
Revert, joseph
Mukherjee, Shima

Application Number:

JP2002559873A

Publication Date:

August 12, 2004

Filing Date:

December 18, 2001

Export Citation:

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Assignee:

Honeywell International Inc.

International Classes:

B24B37/00; C09G1/02; C09K13/06; C23F1/18; C23F1/26; C23F1/30; C23F3/04; C23F3/06; H01L21/304; H01L21/321; H01L21/3213; (IPC1-7): C23F1/18; B24B37/00; C23F1/26; C23F1/30; H01L21/304

Attorney, Agent or Firm:

Yoshio Kawaguchi
Akio Ichiiri
Makoto Ono
Katsuma Osaki
Mitsuaki Tsubokura

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